──────────────────────────────────────
[必]工 作 量： 2600字
[必]工作報酬： NTD 3200 若6/9 23:59前交件增至NTD 3600 (接件時先告知)
[必]涉及語言： 英文
[必]所屬領域： 電子/半導體元件
[必]文件類型： 期刊
[必]截 稿 日： 6/10 中午12:00
[必]應徵期限： 6/9 18:00
[必]聯絡方式： [email protected]
[必]付費方式： 完成後隔日匯款完成
──────────────────────────────────────
[選]工作要求： 之前有過品質不佳的經驗(像是grammarly潤的-___-，
希望可以試譯以下100字
[選]參考段落：（提供部分段落讓譯者評估難度，若未提供請勿刪除）
[選]試 譯 文：
GaN-based high electron mobility transistors (HEMTs) have played an important
role in power electronics [1]. A high drive current can be achieved due to the
high saturation velocity of electrons in GaN and the presence of
two-dimensional electron gas (2DEG) at the AlGaN/GaN heterojunction [2].
Normally-off operation is preferred for power switch application for adequate
safety conditions [3]. However, normally-off device options in the mainstream,
such as gate-recessed metal-insulator-semiconductor HEMTs (MIS-HEMTs) or p-GaN
gate HEMTs [4], require recess processes, which introduce surface damages that
may deteriorate the electrical performance, such as on-resistance, off-current,
or threshold voltage stability, of the devices.
[選]其他事項：（若未提供請勿刪除）
──────────────────────────────────────